2n5400 / 2n5401 pnp silicon epitaxial planar transistors for general purpose, high volt age amplifier applications. as complementary types the npn transistors st 2n5550 and st 2n5551 are recommended. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 o c) symbol value unit collector emitter voltage st 2n5400 st 2n5401 -v ceo -v ceo 120 150 v v collector base voltage st 2n5400 st 2n5401 -v cbo -v cbo 130 160 v v emitter base voltage -v ebo 5 v collector current -i c 600 ma power dissipation p tot 625 1) mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
2n5400 / 2n5401 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at-v ce =5v, -i c =1ma at -v ce =5v, -i c =10ma at -v ce =5v, -i c =50ma st 2n5400 st 2n5401 st 2n5400 st 2n5401 st 2n5400 st 2n5401 h fe h fe h fe h fe h fe h fe 30 50 40 60 40 50 - - - - - - - - 180 240 - - - - - - - - collector emitter breakdown voltage at -i c =1ma st 2n5400 st 2n5401 -v (br)ceo -v (br)ceo 120 150 - - - - v v collector base breakdown voltage at -i c =100 a st 2n5400 st 2n5401 -v (br)cbo -v (br)cbo 130 160 - - - - v v emitter base breakdown voltage at -i e =10 a -v (br)ebo 5 - - v collector cutoff current at -v cb =100v at -v cb =120v st 2n5400 st 2n5401 -i cbo -i cbo - - - - 100 50 na na emitter cutoff current at -v eb =3v -i ebo - - 50 na collector saturation voltage at -i c =10ma, -i b =1ma at -i c =50ma, -i b =5ma -v ce sat -v ce sat - - - - 0.2 0.5 v v base saturation voltage at -i c =10ma, -i b =1ma at -i c =50ma, -i b =5ma -v besat -v besat - - - - 1 1 v v gain bandwidth product at -v ce =10v,-i c =10ma,f=100mhz st 2n5400 st 2n5401 f t f t 100 100 - - 400 400 mhz mhz collector base capacitance at -v cb =10v, f=1mhz c cbo - - 6 pf noise figure at -v ce =5v,-i c =200 a,r g =2k ,f=30h z ?15kh z f - - 8 db thermal resistance junction to ambient r tha - - 200 1) k/w 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
2n5400 / 2n5401 ambient temperature ta ( ) p o w e r d i s s i p a t i o n p t o t ( m w ) p tot - t a c o l l e c t o r c u r r e n t i c ( m a ) base emitter voltage v be (v) i c - v be v ce(sat) c o l l e c t o r c u r r e n t i c ( m a ) v be(sat) v c e ( s a t ) , v b e ( s a t ) - i c c o l l e c t o r e m i t t e r s a t u r a t i o n b a s e e m i t t e r s a t u r a t i o n v o l t a g e v c e ( s a t ) , v b e ( s a t ) ( m v ) c o l l e c t o r o u t p u t c a p a c i t a n c e c o b ( p f ) collector base voltage v cb (v) c ob - v cb t r a n s i t i o n f r e q u e n c y c o l l e c t o r c u r r e n t i c ( m a ) f t - i c
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